Title :
Sputtering (103) Oriented AlN and its SAW Properties Analysis
Author :
Lin, Zhi-Xun ; Wu, Sean ; Ro, Ruyen ; Lee, Maw-Shung
Author_Institution :
Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung
Abstract :
In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of the (103) XRD peak was 0.288deg. The SAW properties of the (103) oriented AIN films on silicon had been theoretically analyzed. The simulation results showed the maximum Rayleigh velocity was about 5626 m/s and the maximum electromechanical coupling constant (K) was about 0.61%. It was found those SAW parameters of the (103)AlN/Si structure surpassed the ones of the (002)AlN/Si structure. The (103) oriented AIN films on silicon is a promising candidate applicable for the design of SAW devices.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; electromechanical effects; semiconductor thin films; silicon; sputter deposition; surface acoustic wave devices; surface acoustic waves; wide band gap semiconductors; (103) oriented films; AlN-Si; FWHM; Rayleigh velocity; Si; XRD; composite surface acoustic wave substrate; crystalline structure; electromechanical coupling constant; full-width half-maximum value; grazing incident angle X-ray diffraction; silicon; sputtering; Acoustic diffraction; Acoustic waves; Crystallization; Semiconductor films; Silicon; Sputtering; Surface acoustic wave devices; Surface acoustic waves; X-ray diffraction; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393398
