Title :
V-band MMIC low-noise amplifier design based on distributed active device model
Author :
Jang, Byung-Jun ; Yom, In-Bok ; Lee, Seong-Pal
Author_Institution :
ETRI, Taejon, South Korea
Abstract :
A V-band two stage MMIC low-noise amplifier using 0.15 μm pHEMT based on a distributed active device model has been designed. This model is successful in constructing the equivalent circuit of HEMT that cannot be scaled from a standard HEMT model. An MMIC amplifier based on the distributed model and careful EM simulation exhibits a maximum gain of 9.6 dB and a minimum noise figure of 3.6 dB at 61 GHz. This results indicate that the distributed HEMT model is effective for the design V-band MMIC low noise amplifiers
Keywords :
HEMT integrated circuits; MMIC amplifiers; circuit simulation; equivalent circuits; field effect MIMIC; integrated circuit modelling; integrated circuit noise; millimetre wave amplifiers; 0.15 micron; 3.6 dB; 61 GHz; 9.6 dB; EM simulation; MMIC low-noise amplifier; V-band; distributed active device model; equivalent circuit; minimum noise figure; pHEMT; Distributed amplifiers; Equivalent circuits; Foundries; Frequency; HEMTs; Low-noise amplifiers; MMICs; Noise measurement; PHEMTs; Semiconductor device modeling;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985579
