• DocumentCode
    2279292
  • Title

    Detecting IDDQ defective CMOS circuits by depowering

  • Author

    Rius, J. ; Figueras, J.

  • Author_Institution
    Dept. d´´Enginyeria Electron., Univ. Politecnica de Catalunya, Barcelona, Spain
  • fYear
    1995
  • fDate
    30 Apr-3 May 1995
  • Firstpage
    324
  • Lastpage
    329
  • Abstract
    When disconnecting the power supply line of a CMOS circuit in its quiescent state, the capacitances present in the circuit hold the logic valves in all their nodes. In non defective circuits, these capacitances discharge very slowly due to the extremely small IDDQ discharge current. On the other hand, in IDDQ defective circuits the discharge is faster than in the previous case because the current involved is many orders of magnitude greater. Some time after the discharge starts, the logic state of some nodes may change, and when this change propagates to a primary output, the defect is detected. Experimental work has been performed to prove these effects and to evaluate their fault detection capabilities
  • Keywords
    CMOS logic circuits; fault location; integrated circuit testing; logic testing; IDDQ defective CMOS circuits; capacitance; depowering; discharge current; fault detection capabilities; logic valves; power supply line disconnection; quiescent state; CMOS logic circuits; Capacitance; Circuit faults; Circuit testing; Current measurement; Electrical fault detection; Impedance; Power supplies; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Test Symposium, 1995. Proceedings., 13th IEEE
  • Conference_Location
    Princeton, NJ
  • ISSN
    1093-0167
  • Print_ISBN
    0-8186-7000-2
  • Type

    conf

  • DOI
    10.1109/VTEST.1995.512656
  • Filename
    512656