Title :
Detecting IDDQ defective CMOS circuits by depowering
Author :
Rius, J. ; Figueras, J.
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Politecnica de Catalunya, Barcelona, Spain
fDate :
30 Apr-3 May 1995
Abstract :
When disconnecting the power supply line of a CMOS circuit in its quiescent state, the capacitances present in the circuit hold the logic valves in all their nodes. In non defective circuits, these capacitances discharge very slowly due to the extremely small IDDQ discharge current. On the other hand, in IDDQ defective circuits the discharge is faster than in the previous case because the current involved is many orders of magnitude greater. Some time after the discharge starts, the logic state of some nodes may change, and when this change propagates to a primary output, the defect is detected. Experimental work has been performed to prove these effects and to evaluate their fault detection capabilities
Keywords :
CMOS logic circuits; fault location; integrated circuit testing; logic testing; IDDQ defective CMOS circuits; capacitance; depowering; discharge current; fault detection capabilities; logic valves; power supply line disconnection; quiescent state; CMOS logic circuits; Capacitance; Circuit faults; Circuit testing; Current measurement; Electrical fault detection; Impedance; Power supplies; Switches; Voltage;
Conference_Titel :
VLSI Test Symposium, 1995. Proceedings., 13th IEEE
Conference_Location :
Princeton, NJ
Print_ISBN :
0-8186-7000-2
DOI :
10.1109/VTEST.1995.512656