Title :
High reliability of 0.1 μm MMIC amplifiers on both AlGaAs/InGaAs/GaAs and InGaAs/InAlAs/InP HEMTs
Author :
Chou, Y.C. ; Leung, D. ; Lai, R. ; Grundbacher, R. ; Scarpulla, J. ; Barsky, M. ; Eng, D. ; Liu, P.H. ; Biedenbender, M. ; Oki, A. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
The high-reliability performance of MMIC amplifiers fabricated using 0.1 μm T-gate on both AlGaAs/InGaAs/GaAs and InGaAs/InAlAs/InP HEMTs is reported. Operating at an accelerated life test condition, two-stage balanced MMIC amplifiers were lifetested at three-temperatures (T1=255°C, T2=270°C and T3=285°C for GaAs HEMT; T1=215°C, T2 =230°C and T3=250°C for InP HEMT) in an either air or N2 ambient. For GaAs HEMT technology, the activation energy (Ea) is as high as 1.7 eV, achieving a projected median-time-to-failure (MTF)>6×109 hours at 125°C junction temperature. For InP HEMT technology, the activation energy (Ea) is greater than 2 eV, achieving a projected median-time-to-failure (MTF)>1×109 hours at 125°C junction temperature. MTF was determined by 3T constant current stress using |ΔS21|>1.0 dB as the failure criteria. The results demonstrate the high reliability of MMIC amplifiers fabricated using 0.1 μm T-gate on both AlGaAs/InGaAs/GaAs and InGaAs/InAlAs/InP HEMTs based on small-signal microwave characteristics of HEMT MMICs
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; circuit reliability; differential amplifiers; failure analysis; field effect MMIC; gallium arsenide; indium compounds; life testing; 0.1 micron; 125 C; 215 to 285 C; AlGaAs-InGaAs-GaAs; InGaAs-InAlAs-InP; T-gate HEMT; accelerated life testing; activation energy; median-time-to-failure; reliability; small-signal microwave characteristics; three-temperature constant current stress; two-stage balanced MMIC amplifier; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Life estimation; Life testing; MMICs; MODFETs; Temperature;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985580
