Title :
VLSI performance metric based on minimum TCAD simulations
Author :
Schrom, G. ; De, V. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Tech. Univ. Wien, Austria
Abstract :
A new approach to performance metrology and qualification of digital VLSI processes with TCAD simulations is proposed. The method yields performance data on the system level directly from raw electrical device data obtained with a minimum set of device simulations. The key performance and qualification parameters are identified, pointing out the differences between these and traditional device performance metrics, and the methods to determine these parameters from the device data are described.
Keywords :
VLSI; circuit CAD; circuit analysis computing; integrated circuit design; device simulation; digital VLSI process; minimum TCAD simulation; performance metric; qualification parameters; system model; Clocks; Equations; Frequency; Inverters; Measurement; Qualifications; System performance; Threshold current; Threshold voltage; Very large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621327
