• DocumentCode
    2279377
  • Title

    VLSI performance metric based on minimum TCAD simulations

  • Author

    Schrom, G. ; De, V. ; Selberherr, S.

  • Author_Institution
    Inst. fur Microelectron., Tech. Univ. Wien, Austria
  • fYear
    1997
  • fDate
    8-10 Sept. 1997
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    A new approach to performance metrology and qualification of digital VLSI processes with TCAD simulations is proposed. The method yields performance data on the system level directly from raw electrical device data obtained with a minimum set of device simulations. The key performance and qualification parameters are identified, pointing out the differences between these and traditional device performance metrics, and the methods to determine these parameters from the device data are described.
  • Keywords
    VLSI; circuit CAD; circuit analysis computing; integrated circuit design; device simulation; digital VLSI process; minimum TCAD simulation; performance metric; qualification parameters; system model; Clocks; Equations; Frequency; Inverters; Measurement; Qualifications; System performance; Threshold current; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
  • Conference_Location
    Cambridge, MA, USA
  • Print_ISBN
    0-7803-3775-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.1997.621327
  • Filename
    621327