DocumentCode :
2279470
Title :
Epitaxial Growth of PLZT Thin Films and their Electro-Optic Properties
Author :
Kosaka, Takuya ; Fukunaga, Daiki ; Uchiyama, Kiyoshi ; Shiosaki, Tadashi
Author_Institution :
Nara Inst. of Sci. & Technol. (NAIST), Nara
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
843
Lastpage :
845
Abstract :
Epitaxially grown lanthanum-modified lead zirconate titanate (PLZT) thin films were deposited on r-cut sapphire substrates using a sol-gel method. The new deposition processes of methanol treatments brought high quality epitaxial growth of PLZT thin films. This film showed high electro-optic (EO) coefficients that were almost comparable to those of bulk PLZTs. We believe this advanced deposition technique will open the door for the future data communication systems with integrated electro-optic devices.
Keywords :
electro-optical devices; electro-optical effects; insulating thin films; lanthanum compounds; lead compounds; liquid phase epitaxial growth; sapphire; sol-gel processing; Al2O3; PLZT-Al2O3; deposition processes; electro-optic coefficients; epitaxial growth; integrated electro-optic devices; lanthanum; lead zirconate titanate thin films; methanol treatments; r-cut sapphire substrates; sol-gel method; Data communication; Electrooptic devices; Electrooptic modulators; Epitaxial growth; Methanol; Optical devices; Optical modulation; Sputtering; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393422
Filename :
4393422
Link To Document :
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