Epitaxial Growth of PLZT Thin Films and their Electro-Optic Properties

Author

Kosaka, Takuya ; Fukunaga, Daiki ; Uchiyama, Kiyoshi ; Shiosaki, Tadashi

Author_Institution

Nara Inst. of Sci. & Technol. (NAIST), Nara

fYear

2007

fDate

27-31 May 2007

Firstpage

843

Lastpage

845

Abstract

Epitaxially grown lanthanum-modified lead zirconate titanate (PLZT) thin films were deposited on r-cut sapphire substrates using a sol-gel method. The new deposition processes of methanol treatments brought high quality epitaxial growth of PLZT thin films. This film showed high electro-optic (EO) coefficients that were almost comparable to those of bulk PLZTs. We believe this advanced deposition technique will open the door for the future data communication systems with integrated electro-optic devices.

Keywords

electro-optical devices; electro-optical effects; insulating thin films; lanthanum compounds; lead compounds; liquid phase epitaxial growth; sapphire; sol-gel processing; Al₂O₃; PLZT-Al₂O₃; deposition processes; electro-optic coefficients; epitaxial growth; integrated electro-optic devices; lanthanum; lead zirconate titanate thin films; methanol treatments; r-cut sapphire substrates; sol-gel method; Data communication; Electrooptic devices; Electrooptic modulators; Epitaxial growth; Methanol; Optical devices; Optical modulation; Sputtering; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393422

Filename

4393422