Fabrication and Optical Properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Films on Si Substrates by PLD Method

Epitaxial 0.67Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ (PMN-PT) thin films with electro-optic effects were fabricated on (La_0.5Sro.5)CoO₃(LSCO)/CeO₂/YSZ-bufferd Si(001) substrates by double-pulse excitation PLD method with a mask mechanism. Epitaxial growths of PMN-PT thin films were successively grown by the two step growth method of PMN-PT film. The PMN-PT seed layer was deposited on the LSCO layer at 500degC which was the same temperature of the LSCO deposition. PMNPT thin films was deposited on PMN-PT seed layer at 600degC which enable to grow high crystalinity PMN-PT film with smooth surfaces. We obtained the optimum fabrication condition of PMN-PT film with mum order thickness. Obtained film showed high crystallinity with FWHM = 0.73 degree of 1.6 mum thickness. Electro-optic property and refractive index measured by prism coupling method were 2.59 at the wavelength of 633 nm. The electro-optic coefficient r₁₃ and r₃₃ was measured by applying the electrical field between semi-transparent thin top electrode of Pt and bottom LSCO electrode. Electro-optic coefficient was r₁₃=17 pm/V at TE mode and r₃₃=55 pm/V at TM mode.