Title :
GaAs buried-channel MESFET analog integrated circuits
Author :
Yang, Howard C. ; Canfield, Philip C. ; Allstot, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
GaAs analog integrated circuits have been implemented using a buried-channel MESFET technology. The circuits exhibit higher precision than similar realizations in conventional technology because the frequency dependence of the small-signal parameters is reduced greatly. Higher speed is also achieved since the buried-channel structure allows for 0.25- mu m minimum gate lengths, whereas 0.5- mu m minimum gate lengths must be used in a conventional MESFET process to avoid deleterious short-channel effects.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; frequency response; gallium arsenide; linear integrated circuits; 0.25 micron; GaAs; GaAs buried-channel MESFET; analogue integrated circuits; frequency dependence; minimum gate lengths; precision; speed; Analog integrated circuits; Frequency dependence; Gallium arsenide; High speed integrated circuits; Integrated circuit technology; MESFET integrated circuits; Scattering; Silicon; Substrates; Transconductance;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo, Finland
DOI :
10.1109/ISCAS.1988.15240
