Title :
Static and dynamic behaviour of paralleled IGBTs
Author_Institution :
SGS-Thomson Microelectron., Catania, Italy
Abstract :
The current balance, thermal stability, and switching behavior characteristics of parallel insulated-gate bipolar transistors (IGBTs) are analyzed. The influences of heat sink mounting, lay-out, and the drive circuit are described in order to demonstrate the best way to parallel IGBTs for optimum performance. An example of two paralleled IGBTs in a fully insulated package is discussed.<>
Keywords :
heat sinks; insulated gate bipolar transistors; switching; IGBT; current balance; drive circuit; dynamic behaviour; heat sink mounting; parallel insulated-gate bipolar transistors; static behaviour; switching behavior; thermal stability; Circuit stability; Insulated gate bipolar transistors; Microelectronics; Packaging; Power engineering and energy; Switching loss; Temperature; Thermal engineering; Thermal loading; Thermal stability;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152401
