• DocumentCode
    2279747
  • Title

    Development of Sn-Zn-Cu lead free solder

  • Author

    Min, Yang ; Xiuzhong, Liu ; Xinghong, Liu ; Jiahui, Dai

  • Author_Institution
    Key Lab. of Liquid Struct. & Heredity of Mater. (Minist. of Educ.), Shandong Univ., Jinan, China
  • fYear
    2010
  • fDate
    16-19 Aug. 2010
  • Firstpage
    784
  • Lastpage
    788
  • Abstract
    Sn-Zn based lead free solder is one type of promising candidate to replace Sn-Pb eutectic solder due to its low cost and melt temperature which near to Sn-Pb eutectic solder. The Sn-Zn-Cu lead free solder was developed by alloying Sn with Zn and Cu in this paper. The effect of Zn and Cu content on the wettability of solder to Cu substrate has been investigated by spread test. The microstructure and composition at interface between solder and Cu substrate were analyzed through optical microscope (OM) and electron probe microanalysis (EPMA). Results show that Sn-4Zn solder has best wettability among Sn-Zn solders. Adding Cu to Sn-4Zn solder can improve the wettability of Sn-4Zn solder for Cu can combine with Zn to produce Cu-Zn alloy and prevent Zn riched phase from existing in the surface of solder. Prior to Sn, Zn combined with Cu dissolved from substrate to produce Cu-Zn intermetallic compounds at the interface of solder and substrate. The formation of continuous Cu-Zn intermetallic compounds layer at the interface between solder and Cu substrate has depressed the forming of Sn-Cu inter metallic compounds layer.
  • Keywords
    copper alloys; electron probe analysis; optical microscopes; solders; substrates; tin alloys; wetting; zinc alloys; Sn-Zn-Cu; copper substrate; electron probe microanalysis; intermetallic compounds; lead free solder; melt temperature; microstructure; optical microscope; wettability; Compounds; Copper; Lead; Microstructure; Substrates; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-8140-8
  • Type

    conf

  • DOI
    10.1109/ICEPT.2010.5582695
  • Filename
    5582695