DocumentCode :
22798
Title :
Deep submicron parallel scanning probe lithography using two-degree-of-freedom microelectromechanical systems actuators with integrated nanotips
Author :
Mehdizadeh, Emad ; Pourkamali, Siavash
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Volume :
9
Issue :
10
fYear :
2014
fDate :
10 2014
Firstpage :
673
Lastpage :
675
Abstract :
A new enabling technology for low-cost high throughput parallel scanning probe nanolithography is presented. Monolithic integration of microelectromechanical systems (MEMS) actuators with two-dimensional probe arrays as well as preliminary results in the simultaneous generation of multiple submicron patterns using such structures is reported. Two-degree-of-freedom electrothermal MEMS positioning structures integrated with nanoscale probe-tips are used to perform parallel scanning probe nanolithography circumventing the main deficiency of tip-based nanolithography, that is, low throughput. Simultaneous generation of multiple patterns scratched into 800 nm thick photoresist and 200 nm thick gold layers has been successfully demonstrated. Scratch marks as narrow and as long as ~50 and 27 μm, respectively, have been generated in the X and Y directions using two different microactuator structures carrying 10 and 64 nanotips.
Keywords :
microactuators; nanolithography; photoresists; MEMS actuators; deep submicron parallel scanning probe lithography; gold layers; integrated nanotips; low-cost high throughput parallel scanning probe nanolithography; microactuator structures; multiple submicron patterns; nanoscale probe-tips; photoresist; scratch marks; size 200 nm; size 800 nm; tip-based nanolithography; two-degree-of-freedom electrothermal MEMS positioning structures; two-degree-of-freedom microelectromechanical systems actuators; two-dimensional probe arrays;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2014.0272
Filename :
6942317
Link To Document :
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