• DocumentCode
    22798
  • Title

    Deep submicron parallel scanning probe lithography using two-degree-of-freedom microelectromechanical systems actuators with integrated nanotips

  • Author

    Mehdizadeh, Emad ; Pourkamali, Siavash

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
  • Volume
    9
  • Issue
    10
  • fYear
    2014
  • fDate
    10 2014
  • Firstpage
    673
  • Lastpage
    675
  • Abstract
    A new enabling technology for low-cost high throughput parallel scanning probe nanolithography is presented. Monolithic integration of microelectromechanical systems (MEMS) actuators with two-dimensional probe arrays as well as preliminary results in the simultaneous generation of multiple submicron patterns using such structures is reported. Two-degree-of-freedom electrothermal MEMS positioning structures integrated with nanoscale probe-tips are used to perform parallel scanning probe nanolithography circumventing the main deficiency of tip-based nanolithography, that is, low throughput. Simultaneous generation of multiple patterns scratched into 800 nm thick photoresist and 200 nm thick gold layers has been successfully demonstrated. Scratch marks as narrow and as long as ~50 and 27 μm, respectively, have been generated in the X and Y directions using two different microactuator structures carrying 10 and 64 nanotips.
  • Keywords
    microactuators; nanolithography; photoresists; MEMS actuators; deep submicron parallel scanning probe lithography; gold layers; integrated nanotips; low-cost high throughput parallel scanning probe nanolithography; microactuator structures; multiple submicron patterns; nanoscale probe-tips; photoresist; scratch marks; size 200 nm; size 800 nm; tip-based nanolithography; two-degree-of-freedom electrothermal MEMS positioning structures; two-degree-of-freedom microelectromechanical systems actuators; two-dimensional probe arrays;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2014.0272
  • Filename
    6942317