DocumentCode :
2279801
Title :
Electrical simulation research for IC package gold bonding wire
Author :
Yusheng, Cao ; Shuan, Du ; Quanbin, Yao ; Yuanfu, Zhao
Author_Institution :
Beijing Microelectron. Technol. Inst., Beijing, China
fYear :
2010
fDate :
16-19 Aug. 2010
Firstpage :
781
Lastpage :
783
Abstract :
With the development of semiconductor technology, the IC frequency become higher and higher, and the IC package become more and more importance. Currently, the wiring bonding is mainly used to connect die and package pads, so parasitical parameter of bonding wire must be considered especially for RFIC and MMIC component. It was discussed by finite element simulation and analysis in this paper that the different standard gold bonding wires have different effects on the parasitical parameter and the electrical performance of one ideal amplifier.
Keywords :
bonding processes; integrated circuit packaging; IC frequency; IC package gold bonding wire; MMIC component; RFIC; electrical simulation research; finite element simulation; semiconductor technology; wiring bonding; Bonding; Capacitance; Inductance; Integrated circuit modeling; Packaging; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-8140-8
Type :
conf
DOI :
10.1109/ICEPT.2010.5582699
Filename :
5582699
Link To Document :
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