DocumentCode
2279917
Title
Magneto-resistance oscillations and zero-resistance states induced by photo-excitation in the quasi two-dimensional GaAs/AlGaAs system
Author
Mani, R.G.
Author_Institution
Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA
fYear
2008
fDate
8-13 June 2008
Firstpage
496
Lastpage
497
Abstract
Photo-excitation of high quality two dimensional electron systems induces "1/4 cycle shifted" inverse- B-periodic magnetoresistance oscillations with nodes in the resistance at Bf / j for the fundamental series, where j is a positive integer or half integer, Bf is the characteristic magnetic field that increases with the radiation frequency, f, as Bf = 2pi f m*/e, m* is an electron effective mass, and e is the electron charge. At the lowest temperatures and modest magnetic fields, vanishing diagonal resistance is observed at the resistance minima as in the quantum Hall situation, without concomitant plateaus in the Hall effect. Here, we describe and review the remarkable features of these novel effects.
Keywords
III-V semiconductors; aluminium compounds; effective mass; gallium arsenide; magnetoresistance; quantum Hall effect; GaAs-AlGaAs; electron charge; electron effective mass; inverse-B-periodic magnetoresistance oscillations; magnetic field; photoexcitation; quantum Hall effect; quasi2D system; radiation frequency; zero-resistance states; Conductivity; Effective mass; Electric resistance; Electron mobility; Frequency; Gallium arsenide; Hall effect; Magnetoresistance; Physics; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location
Broomfield, CO
Print_ISBN
978-1-4244-2399-6
Electronic_ISBN
978-1-4244-2400-9
Type
conf
DOI
10.1109/CPEM.2008.4574870
Filename
4574870
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