• DocumentCode
    2279917
  • Title

    Magneto-resistance oscillations and zero-resistance states induced by photo-excitation in the quasi two-dimensional GaAs/AlGaAs system

  • Author

    Mani, R.G.

  • Author_Institution
    Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA
  • fYear
    2008
  • fDate
    8-13 June 2008
  • Firstpage
    496
  • Lastpage
    497
  • Abstract
    Photo-excitation of high quality two dimensional electron systems induces "1/4 cycle shifted" inverse- B-periodic magnetoresistance oscillations with nodes in the resistance at Bf / j for the fundamental series, where j is a positive integer or half integer, Bf is the characteristic magnetic field that increases with the radiation frequency, f, as Bf = 2pi f m*/e, m* is an electron effective mass, and e is the electron charge. At the lowest temperatures and modest magnetic fields, vanishing diagonal resistance is observed at the resistance minima as in the quantum Hall situation, without concomitant plateaus in the Hall effect. Here, we describe and review the remarkable features of these novel effects.
  • Keywords
    III-V semiconductors; aluminium compounds; effective mass; gallium arsenide; magnetoresistance; quantum Hall effect; GaAs-AlGaAs; electron charge; electron effective mass; inverse-B-periodic magnetoresistance oscillations; magnetic field; photoexcitation; quantum Hall effect; quasi2D system; radiation frequency; zero-resistance states; Conductivity; Effective mass; Electric resistance; Electron mobility; Frequency; Gallium arsenide; Hall effect; Magnetoresistance; Physics; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
  • Conference_Location
    Broomfield, CO
  • Print_ISBN
    978-1-4244-2399-6
  • Electronic_ISBN
    978-1-4244-2400-9
  • Type

    conf

  • DOI
    10.1109/CPEM.2008.4574870
  • Filename
    4574870