DocumentCode
2280133
Title
Silicon BJT modeling using VBIC model
Author
Huang, G.W. ; Chen, K.M. ; Kuan, J.F. ; Deng, Y.M. ; Wen, S.Y. ; Chiu, D.Y. ; Wang, M.T.
Author_Institution
Nat. Nano Device Labs., Hsinchu, Taiwan
Volume
1
fYear
2001
fDate
2001
Firstpage
240
Abstract
In the paper, we develop an accurate and efficient methodology to extract the parameters for the VBIC model. The thermal behavior of a Si BJT is also investigated and modeled. Simulation results of extracted VBIC model are compared with the measurement data and shows very good agreement in both DC and S-parameters prediction
Keywords
S-parameters; elemental semiconductors; microwave bipolar transistors; microwave measurement; semiconductor device measurement; semiconductor device models; silicon; BJT modeling; DC parameters; S-parameters; Si; VBIC model; measurement data; microwave measurements; thermal behavior; vertical bipolar inter-company model; Computer industry; Data mining; Integrated circuit modeling; Parameter extraction; Parasitic capacitance; Predictive models; Probes; Resistors; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location
Taipei
Print_ISBN
0-7803-7138-0
Type
conf
DOI
10.1109/APMC.2001.985631
Filename
985631
Link To Document