Title :
Optimum Ge profile design for base transit time minimization of SiGe HBT
Author :
Chang, S.T. ; Liu, C.W. ; Lin, C.-H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
An analytical equation of the base transit time including the effects of minority carrier recombination lifetime and velocity saturation for Si/SiGe HBTs with different Ge profiles has been derived. The reduction of recombination lifetime in the neutral base region due to the heavy base doping can shorten the base transit time, while the finite saturation velocity degrades the base transit time, as compared to infinite saturation velocity. The optimum design of Ge profiles in the base to minimize the base transit time can be obtained by the analytical model
Keywords :
Ge-Si alloys; carrier lifetime; doping profiles; electron-hole recombination; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; minority carriers; semiconductor materials; silicon; HBT; Si-SiGe; Si/SiGe; analytical equation; base transit time; base transit time minimization; finite saturation velocity; heavy base doping; infinite saturation velocity; minority carrier recombination lifetime; neutral base region; optimum profile design; velocity saturation; Cutoff frequency; Doping; Electrons; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Minimization; Photonic band gap; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985632
