Title :
Modeling stress effects on thin oxide growth kinetics
Author :
Huang, S.-F. ; Griffin, P.B. ; Plummer, J.D. ; Rissman, P.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
This paper describes the development of a thin oxide growth model, which includes stress dependencies and, hence, allows the modeling of non-planar structures with thin oxides.
Keywords :
oxidation; semiconductor process modelling; stress effects; model; nonplanar structure; stress effect; thin oxide growth kinetics; Dielectrics and electrical insulation; Filling; Kinetic theory; Oxidation; Predictive models; Silicon; Temperature; Thermal stresses; Ultra large scale integration; Visualization;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621333
