Diamond for enhanced GaN device performance

AlGaN/GaN high electron mobility transistors (HEMT) semiconductor technology holds promise for revolutionary improvements in the cost, size, weight, and performance of a broad range of military and commercial microelectronics [1]. However, exploiting the true capabilities of GaN is a compromise between the desired RF performance and the realities of current thermal solutions. In this work we present modeling and integration details on performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated on freestanding and mounted, heat-spreading diamond substrates. The excellent thermal properties of diamond substrates grown by chemical vapor deposition (CVD) provide a superior heat spreading material for electronic packages. The successful on-wafer integration of diamond with gallium nitride (GaN) has emerged as a critical solution for the expected thermal challenges of the next generation of high power RF and microwave devices.