Title :
A high performance gate/base drive using a current source
Author :
Stielau, O.H. ; Schoeman, J.J. ; van Wyk, J.D.
Author_Institution :
Energy Lab., Rand Afrikaans Univ., Johannesburg, South Africa
Abstract :
A gate drive that uses forced commutation to switch on the main device is described. The fundamental limits of the drive are pointed out, including minimum off-time and maximum on-time. The results of a loss analysis performed on the drive are presented. Experimental results show that the efficiency of the drive is exceptionally high when compared to conventional gate drives, and measured turned-on times of a zero turn-off thyristor are extremely low.<>
Keywords :
semiconductor switches; current source; efficiency; forced commutation; gate/base drive; loss analysis; maximum on-time; minimum off-time; zero turn-off thyristor; Africa; Drives; Impedance; Inductance; Laboratories; MOSFET circuits; Semiconductor devices; Switches; Switching circuits; Voltage control;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152406
