DocumentCode
228070
Title
Reliability of MEMS devices under multiple environments
Author
Lall, P. ; Abrol, Amrit S. ; Simpson, Lee ; Glover, Jack
Author_Institution
Dept. of Mech. Eng., Auburn Univ., Auburn, AL, USA
fYear
2014
fDate
27-30 May 2014
Firstpage
1313
Lastpage
1321
Abstract
Micro-electro-mechanical systems (MEMS) devices are used in a variety of applications for sensing acceleration, translation, rotation, pressure and sound in addition to actuation and signal generation. The MEMS devices have been applied to varied fields including healthcare and automotive applications. Data on reliability degradation of MEMS devices in harsh environment applications including combined environments of high temperature exposure, and high-g shock loading is scarce. In this paper, a test vehicle with a MEMS Accelerometers has been studied under high-temperature exposure followed by high-g mechanical shock. Test boards have been designed to assemble all the sensor types. The boards have been subjected to mechanical shocks using the method 2002.5, condition G, under the standard MIL-STD-883H test. Shock pulse amplitudes have been ramped from 500 to 30,000g with pulse duration between 0.1 to 1 millisecond. Full field effect on the components has been extracted using high speed cameras operating at 100,000 fps in conjunction with digital image correlation. The degradation of the MEMS response has been studied using statistical pattern recognition. The failure mechanisms have been characterized. The deterioration of the components has been extracted using non-destructive evaluation with micro-CT scans and X-ray. Further, the degradation of the MEMS response has been studied using statistical pattern recognition. The failure mechanisms have been characterized.
Keywords
accelerometers; computerised tomography; failure analysis; microsensors; military equipment; MEMS accelerometers; MEMS device degradation; MEMS device reliability; MIL-STD-883H test; X-ray scan; failure mechanisms; harsh environment applications; high temperature exposure; high-g mechanical shock; microcomputerised tomography scan; microelectromechanical systems; nondestructive evaluation; statistical pattern recognition; Acceleration; Accelerometers; Assembly; Electric shock; Micromechanical devices; Reliability; Testing; Confidence Intervals; Mahalanobis Distance; Micro-Electro-Mechanical-Systems; Printed Circuit Board; TTEST; Temperature-Humidity; Thermal Cycling;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2014 IEEE Intersociety Conference on
Conference_Location
Orlando, FL
ISSN
1087-9870
Type
conf
DOI
10.1109/ITHERM.2014.6892432
Filename
6892432
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