DocumentCode
2280821
Title
HVIGBT physical model analysis during transient
Author
Ji, Shiqi ; Zhao, Zhengming ; Yuan, Liqiang
Author_Institution
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear
2011
fDate
20-23 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
The insulated gate bipolar transistor (IGBT) physical models were studied in details, especially Hefner model. A HVIGBT transient physical model is presented in terms of the analysis. The parameters of the model are provided for a typical IGBT of FZ600R65KF1. The test experiment was done and the accuracy of the model was verified. Based on the IGBT model, the difference between HVIGBT and LVIGBT was compared and the effect of model parameters on circuit characteristics was analyzed.
Keywords
insulated gate bipolar transistors; semiconductor device models; HVIGBT; Hefner model; circuit characteristics; insulated gate bipolar transistor; physical model analysis; Analytical models; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Mathematical model; Semiconductor device modeling; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Machines and Systems (ICEMS), 2011 International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4577-1044-5
Type
conf
DOI
10.1109/ICEMS.2011.6073834
Filename
6073834
Link To Document