Title :
CIGS solar cell absorber formed by rapid thermal processing
Author :
Kwang Bok Kim ; Yong Min Jeong ; Byeong Hyeon Kim ; Kyung Wan Koo ; Joo Yong Cheon ; Dong Wan Park ; Hui Gon Chun
Author_Institution :
R&D Center, Kumho Electr. Inc., Gwangju, South Korea
Abstract :
Cu(In, Ga)Se2 thin film absorbers were fabricated applying 2-step heating process by IR-lamp furnace. Precursors prepared from Cu/Ga alloy and In target with sputtering process were deposited on Mo back contact layer. The characteristics of selenization on CIGS layer were characterized depending on the conditions of heating rates and holding time in several steps. The characterization of thin film properties were carried out by XRF, XRD, SEM, TEM, SIMS and Current density-voltage (J-V) measurements. The influence of IR-lamp furnace conditions on device performance was investigated. In this work, CIGS solar cells with a absorber composition of Cu(In0.76Ga0.24)Se2 showed 13.56% of conversion efficiency.
Keywords :
X-ray diffraction; heat treatment; heating; scanning electron microscopy; semiconductor thin films; solar cells; sputtering; transmission electron microscopy; 2-step heating process; CIGS layer; CIGS solar cell absorber; CuGaSe2; CuInSe2; IR-lamp furnace; SEM; SIMS; TEM; XRD; XRF; conversion efficiency; current density-voltage measurements; rapid thermal processing; selenization; sputtering process; thin film absorbers; thin film properties; Films; Furnaces; Glass; Indium; Morphology; Photovoltaic cells; Substrates; CIGS; Selenization; Thin Film Solar cell;
Conference_Titel :
Strategic Technology (IFOST), 2012 7th International Forum on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4673-1772-6
DOI :
10.1109/IFOST.2012.6357519
