Title :
Radiation induced changes in power MOSFET gate-charge measurements
Author :
Weber, William ; Schrimpf, Ronald D. ; Meyers, Ronald G. ; Witulski, Arthur F. ; Galloway, Kenneth F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
The effects of ionizing-radiation-induced oxide and interface traps on gate-charge measurements of power MOSFETs are discussed. Commercial and radiation hardened power DMOS devices were irradiated, and the oxide trapped charge and charge in interface traps at threshold were determined from the threshold voltage shifts. The build-up of radiation-induced charge was then correlated to changes observed in the gate-charge measurements. The radiation-induced changes in the gate-charge measurements at 500 krad(Si) resulted in a 15% increase in the amount of energy needed to turn the device on and off in a boost power converter.<>
Keywords :
insulated gate field effect transistors; power transistors; radiation hardening (electronics); boost power converter; gate-charge measurements; interface traps; ionizing-radiation-induced oxide; power MOSFET; radiation hardened power DMOS devices; Capacitance; Charge measurement; Current measurement; Electron traps; Ionizing radiation; MOSFET circuits; Power MOSFET; Power measurement; Testing; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152411
