Title :
Development of a voltage divider based on quantized Hall resistance arrays for a high DC voltage standard II
Author :
Kaneko, N. ; Oe, T. ; Domae, A. ; Urano, C. ; Itatani, T. ; Ishii, H. ; Kiryu, S.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan, Tsukuba
Abstract :
A one-chip quantized voltage divider device based on the technology of integration of quantized Hall resistance (QHR) bars on a GaAs/AlGaAs Heterostructure Substrate has been developed. The first experimental QHR voltage divider device, which consists of a series of 20 QHR bars, has been fabricated. A preliminary test in our evaluation study of the device clearly shows that it functions as a voltage multiplier/divider.
Keywords :
Hall effect devices; III-V semiconductors; measurement standards; quantum Hall effect; voltage dividers; voltage measurement; voltage multipliers; GaAs-AlGaAs; QHR bars; QHR voltage divider device fabrication; high DC voltage standard II; one-chip quantized voltage divider device; quantized Hall resistance arrays; semiconductor heterostructure substrate; voltage multiplier; Bars; Coatings; Dry etching; Fabrication; Gold; Metrology; Polyimides; Resistors; Standards development; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
DOI :
10.1109/CPEM.2008.4574968
