Title :
Modeling the effect of phosphorus dose loss at the SiO/sub 2/ interface on CMOS device characteristics
Author :
Vuong, H.-H. ; Rafferty, C.S. ; Mcmacken, J.R. ; Ning, Jicai ; Chaudhry, S.
Author_Institution :
Lucent Technol., Bell Labs., Murray Hill, NJ, USA
Abstract :
A model for the phosphorus dose loss effect is developed and incorporated into the process simulator PROPHET. The dose loss model is applied consistently with the Transient Enhanced Diffusion and the segregation models in PROPHET to provide doping profiles used by the device simulator PADRE in simulations of NMOS, PMOS, and isolation structures for actual VLSI technologies. Comparison of the simulated and measured device characteristics and their dependence on substrate bias and structure geometry shows good agreement, and furthermore highlights the importance of the dose loss phenomenon in these structures.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; diffusion; doping profiles; ion implantation; isolation technology; phosphorus; semiconductor process modelling; surface segregation; CMOS device characteristics; NMOS structures; P dose loss effect; PADRE; PMOS structures; PROPHET; Si-SiO/sub 2/; SiO/sub 2/ interface; VLSI technologies; device simulator; doping profiles; isolation structures; model; process simulator; segregation model; structure geometry dependence; substrate bias dependence; transient enhanced diffusion model; Annealing; CMOS technology; Doping profiles; Implants; MOS devices; Oxidation; Partial differential equations; Semiconductor device modeling; Semiconductor process modeling; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621342
