Title :
Solution of 1-D Schrodinger and Poisson equations double gate SOI MOS
Author :
Fiegna, C. ; Abramo, A.
Author_Institution :
Dept. of Eng., Ferrara Univ., Italy
Abstract :
In this paper the self-consistent solution of Schrodinger and Poisson equations is applied to single- and double-gate SOI MOS structures. The reasons for possible advantages related to the presence of the two symmetric gates in the latter case are investigated.
Keywords :
MOSFET; Schrodinger equation; electron density; semiconductor device models; silicon-on-insulator; 1-D Schrodinger equation; MOSFET; Poisson equation; double-gate SOI MOS structures; effective electric field; electron density profile; self-consistent solution; single-gate SOI MOS structures; symmetric gates; Capacitance; Doping; Electrodes; Fabrication; MOS devices; MOSFETs; Physics; Poisson equations; Silicon; Transconductance;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621344
