• DocumentCode
    2281794
  • Title

    Solution of 1-D Schrodinger and Poisson equations double gate SOI MOS

  • Author

    Fiegna, C. ; Abramo, A.

  • Author_Institution
    Dept. of Eng., Ferrara Univ., Italy
  • fYear
    1997
  • fDate
    8-10 Sept. 1997
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    In this paper the self-consistent solution of Schrodinger and Poisson equations is applied to single- and double-gate SOI MOS structures. The reasons for possible advantages related to the presence of the two symmetric gates in the latter case are investigated.
  • Keywords
    MOSFET; Schrodinger equation; electron density; semiconductor device models; silicon-on-insulator; 1-D Schrodinger equation; MOSFET; Poisson equation; double-gate SOI MOS structures; effective electric field; electron density profile; self-consistent solution; single-gate SOI MOS structures; symmetric gates; Capacitance; Doping; Electrodes; Fabrication; MOS devices; MOSFETs; Physics; Poisson equations; Silicon; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
  • Conference_Location
    Cambridge, MA, USA
  • Print_ISBN
    0-7803-3775-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.1997.621344
  • Filename
    621344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2281794