Title :
Density-gradient simulations of quantum effects in ultra-thin-oxide MOS structures
Author :
Ancona, M.G. ; Yu, Z. ; Lee, W.-C. ; Dutton, R.W. ; Voorde, P.V.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The density-gradient approach to quantum transport theory is used to model the C-V characteristics of MOS devices with ultra-thin gate oxides. The method is shown to provide a physics-based approach the works well in all bias regimes and is simple enough for engineering applications.
Keywords :
MIS devices; MIS structures; capacitance; electron density; quantum interference devices; quantum interference phenomena; semiconductor device models; C-V characteristics; MOS devices; density-gradient simulations; engineering applications; physics-based approach; quantum effects; quantum transport theory; ultra-thin gate oxides; Capacitance-voltage characteristics; Electrons; Gate leakage; Laboratories; MOS devices; Quantum mechanics; Semiconductor optical amplifiers; Solid modeling; Ultra large scale integration; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621345
