Title :
ICM-an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs
Author :
Yuhua Cheng ; Kai Chen ; Imai, K. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
An analytical inversion charge model, ICM, based on a surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effects is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region, of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFETs down to 0.13 /spl mu/m channel length.
Keywords :
MOSFET; inversion layers; quantum interference phenomena; semiconductor device models; surface potential; 0.13 mum; ICM; accurate modeling; analytical inversion charge model; channel length; gate oxide MOSFETs; low power circuits; moderate inversion region; poly-gate depletion; quantum mechanical effect correction; strong inversion; surface potential solution; weak inversion; Analytical models; Charge carrier density; Charge measurement; Current measurement; Doping; MOSFETs; Quantization; Semiconductor process modeling; Statistics; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621348
