Simulation of secondary ion mass spectrometry for steep dopant distribution profiling

This paper describes Monte Carlo simulations of Secondary Ion Mass Spectrometry (SIMS) depth profiling for steep dopant distribution to evaluate quantitative differences between the measured and actual profiles. SIMS measurement data for steep dopant distribution profiles inherently show some broadening due to, for instance, recoiling effects. The simulation procedure was based on a binary-collision approximation Monte Carlo ion implantation simulation with consideration of density modification and surface recession. Calculation of secondary emission-count reproduced actual SIMS measurement profiles quite well. With a help of a statistical enhancement technique, a resolution function can be calculated for retrieving an actual profile from the measured one with the deconvolution method.