DocumentCode
2282024
Title
Mesoscale modeling of diffusion in polycrystalline structures
Author
Bassman, L.C. ; Ibrahim, N.R. ; Pinsky, P.M. ; Saraswat, K.C. ; Deal, M.D.
Author_Institution
Dept. of Mech. Eng., Stanford Univ., CA, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
149
Lastpage
152
Abstract
We present a new diffusion simulation methodology which has been developed as part of our BackEnd Simulation Tool (BEST) effort. This approach uses the finite element method to address issues critical for modeling polycrystalline materials at the mesoscopic scale. We have included separate grain and grain boundary diffusion, spatially continuous material properties and the concept of equilibrium concentration.
Keywords
finite element analysis; grain boundary diffusion; mesoscopic systems; semiconductor process modelling; BEST; BackEnd Simulation Tool; equilibrium concentration; finite element method; grain boundary diffusion; grain diffusion; mesoscale model; polycrystalline material; Aluminum; Computational modeling; Crystalline materials; Finite element methods; Grain boundaries; Grain size; Impurities; Mechanical engineering; Silicides; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621359
Filename
621359
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