Investigation of the Electrical Performances of µtrench PCM at High Operating Temperature

Author

Navarro, G. ; Souiki, S. ; Persico, A. ; Sousa, V. ; Nodin, J.-F. ; Jahan, C. ; Aussenac, F. ; Delaye, V. ; Cueto, O. ; Perniola, L. ; De Salvo, B.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, we investigate the electrical performance of Phase-Change Memory (PCM) devices at high operating temperature (up to 180°C). We perform a detailed experimental analysis on μtrench PCM cells with different dimensions. We show that the high temperature strongly impacts the programming curves, by linearly decreasing the threshold voltage and decreasing the RESET current. Furthermore, the cyclability of the cell significantly increases at high temperature. These results are explained by means of physical simulations, highlighting the decreased thermal peak stress in the cell at high operating temperatures.

Keywords

phase change materials; phase change memories; μtrench PCM; RESET current; cyclability; electrical performances; high operating temperature; phase-change memory; programming curves; thermal peak stress; Performance evaluation; Phase change materials; Programming; Resistance; Temperature measurement; Thermal stresses; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213617

Filename

6213617