• DocumentCode
    2282088
  • Title

    A Investigation of E/W Cycle Characteristics for 2y-nm MLC NAND Flash Memory Devices

  • Author

    Jeong, YeonJoo ; Lee, Sangjo ; Cho, Sunghoon ; Kim, Pyunghwa ; Park, Milim ; Lee, SungPyo ; Shim, Hyunyoung ; Cho, Myoung Kwan ; Ahn, Kun-Ok ; Bae, Gihyun ; Park, Sungwook

  • Author_Institution
    Flash Dev. Div., Hynix Semicond. Inc., Cheongju, South Korea
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, the challenges of NAND flash memory devices with E/W cycling characteristics are discussed. The large VTH shift in 2y-nm technology is investigated with various causes such as air-gap, poly2 valley plug gap-fill and string current. The countermeasures including process and operation algorithm are also exhibited to improve the reliability of 2y-nm NAND Flash memory device.
  • Keywords
    NAND circuits; flash memories; integrated circuit reliability; 2y-nm MLC NAND flash memory device reliability; 2y-nm technology; E-W cycle characteristics; air-gap; poly2 valley plug gap-fill; string current; Air gaps; Capacitance-voltage characteristics; Degradation; Flash memory; Junctions; Plugs; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2012 4th IEEE International
  • Conference_Location
    Milan
  • Print_ISBN
    978-1-4673-1079-6
  • Type

    conf

  • DOI
    10.1109/IMW.2012.6213619
  • Filename
    6213619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2282088