Multilayer Graphene as Charge Storage Layer in Floating Gate Flash Memory

Author

Misra, Abhishek ; Kalita, Hemen ; Waikar, Mayur ; Gour, Amit ; Bhaisare, Meenakshi ; Khare, Manali ; Aslam, Mohammed ; Kottantharayil, Anil

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

4

Abstract

Charge storage capability of multilayer graphene (MLG) in floating gate flash memory structure is demonstrated. MLG sheets are considered for this purpose because of the higher work function and higher density of states compared to single layer graphene (SLG) and lower conductivity along c-axis. A memory window of 6.8V for 1 second programming is obtained at ±18V program/erase voltage. Number of electrons stored in MLG sheets after 18V programming voltage is calculated as 9.1 × 10¹² cm^-2 which is higher than the density of states in SLG, suggesting the suitability of MLG for multi level data storage flash memory devices.

Keywords

flash memories; graphene; work function; C; MLG sheets; SLG; charge storage capability; charge storage layer; conductivity; electrons storage; floating gate flash memory structure; memory window; multilayer graphene; multilevel data storage flash memory devices; program-erase voltage; programming voltage; single layer graphene; time 1 s; voltage -18 V to 18 V; voltage 6.8 V; Dielectrics; Flash memory; Logic gates; Metals; Nonvolatile memory; Programming; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213626

Filename

6213626