• DocumentCode
    2282245
  • Title

    Current gain modeling of SiGe DHBTs in SPICE including retarding potential barrier effect

  • Author

    Khanduri, Gagan ; Panwar, Brishbhan

  • Author_Institution
    Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi
  • fYear
    2007
  • fDate
    22-25 March 2007
  • Firstpage
    569
  • Lastpage
    573
  • Abstract
    This paper presents an approach to model the current gain in SiGe DHBTs, by using the fitting coefficients to modify the model parameters of Si BJTs in OrCAD PSPICE. The effect of dynamic retarding potential barrier at base-collector heterojunction in SiGe DHBTs is also modeled by using a resistor in parallel with internal base resistance RB.
  • Keywords
    Ge-Si alloys; SPICE; heterojunction bipolar transistors; DHBT; OrCAD PSPICE; SiGe; barrier effect; base-collector heterojunction; current gain modeling; double heterojunction bipolar transistors; dynamic retarding potential; internal base resistance; Capacitance; Current density; Double heterojunction bipolar transistors; Equivalent circuits; Germanium silicon alloys; Immune system; Resistors; SPICE; Semiconductor process modeling; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SoutheastCon, 2007. Proceedings. IEEE
  • Conference_Location
    Richmond, VA
  • Print_ISBN
    1-4244-1028-2
  • Electronic_ISBN
    1-4244-1029-0
  • Type

    conf

  • DOI
    10.1109/SECON.2007.342967
  • Filename
    4147497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2282245