DocumentCode :
2282245
Title :
Current gain modeling of SiGe DHBTs in SPICE including retarding potential barrier effect
Author :
Khanduri, Gagan ; Panwar, Brishbhan
Author_Institution :
Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi
fYear :
2007
fDate :
22-25 March 2007
Firstpage :
569
Lastpage :
573
Abstract :
This paper presents an approach to model the current gain in SiGe DHBTs, by using the fitting coefficients to modify the model parameters of Si BJTs in OrCAD PSPICE. The effect of dynamic retarding potential barrier at base-collector heterojunction in SiGe DHBTs is also modeled by using a resistor in parallel with internal base resistance RB.
Keywords :
Ge-Si alloys; SPICE; heterojunction bipolar transistors; DHBT; OrCAD PSPICE; SiGe; barrier effect; base-collector heterojunction; current gain modeling; double heterojunction bipolar transistors; dynamic retarding potential; internal base resistance; Capacitance; Current density; Double heterojunction bipolar transistors; Equivalent circuits; Germanium silicon alloys; Immune system; Resistors; SPICE; Semiconductor process modeling; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoutheastCon, 2007. Proceedings. IEEE
Conference_Location :
Richmond, VA
Print_ISBN :
1-4244-1028-2
Electronic_ISBN :
1-4244-1029-0
Type :
conf
DOI :
10.1109/SECON.2007.342967
Filename :
4147497
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2282245
بازگشت