Title :
Base doping profile optimization including carriers velocity saturation effect
Author :
Khanduri, Gagan ; Panwar, Brishbhan
Author_Institution :
Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi
Abstract :
This work presents an iterative approach to optimize the base doping of conventional Si BJTs for practical base profiles having retarding field region near emitter-base junction. The analysis also presents the effect of minority carrier velocity saturation on total base transit time for homojunction bipolar transistors.
Keywords :
bipolar transistors; doping profiles; iterative methods; semiconductor doping; base doping profile optimization; carriers velocity saturation effect; emitter-base junction; homojunction bipolar transistors; Acceleration; Bipolar transistors; Constraint optimization; Delay effects; Doping profiles; Electrons; Iterative methods; Mathematical programming; Mathematics; Optimization methods;
Conference_Titel :
SoutheastCon, 2007. Proceedings. IEEE
Conference_Location :
Richmond, VA
Print_ISBN :
1-4244-1028-2
Electronic_ISBN :
1-4244-1029-0
DOI :
10.1109/SECON.2007.342968
