Title :
An Update on Emerging Memory: Progress to 2Xnm
Author :
Prall, Kirk ; Ramaswamy, Nirmal ; Kinney, Wayne ; Holtzclaw, Karl ; Chen, Xiaonan ; Strand, Jonathan ; Bez, Roberto
Author_Institution :
Micron Technol., Boise, ID, USA
Abstract :
This paper will give an update on the status of emerging memory (EM) and potential markets. The more popular EM technologies will be reviewed, including PCM, RRAM, and STRAM. The biggest challenges for each technology will be highlighted.
Keywords :
random-access storage; EM technology; PCM; RRAM; STRAM; emerging memory; potential markets; Anisotropic magnetoresistance; Heating; Noise; Phase change materials; Random access memory; Resistance;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213635
