• DocumentCode
    2282338
  • Title

    Impact of device scaling and material composition on the soft error rates in avionic systems

  • Author

    Atkinson, William J. ; Seidler, William A.

  • Author_Institution
    Boeing Co., Huntsville, AL
  • fYear
    2007
  • fDate
    22-25 March 2007
  • Firstpage
    601
  • Lastpage
    605
  • Abstract
    The soft error rate (SER) of CMOS device models due to atmospheric neutrons for technologies between 1992 and 2011 were computed at various altitudes and latitudes. Model predictions of the SER for 350 and 600 nm CMOS representative of 1992 and 1994 were 1.8 and 3 upsets per day. Predictions of 9.8 and 11.6 upsets per day were made for 100 and 50 nm CMOS devices representing the technologies of 2005 and 2011. These observations taken together indicated that the SER slowly increased with decreasing feature size at a rate less than linear for sizes below 100 nm.
  • Keywords
    CMOS integrated circuits; avionics; radiation hardening (electronics); scaling circuits; 100 nm; 350 nm; 50 nm; 600 nm; CMOS device; atmospheric neutrons; avionic systems; device scaling; material composition; soft error rates; Aerospace electronics; Atmospheric modeling; Composite materials; Error analysis; Microelectronics; Neutrons; Postal services; Semiconductor device modeling; Single event transient; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SoutheastCon, 2007. Proceedings. IEEE
  • Conference_Location
    Richmond, VA
  • Print_ISBN
    1-4244-1028-2
  • Electronic_ISBN
    1-4244-1029-0
  • Type

    conf

  • DOI
    10.1109/SECON.2007.342973
  • Filename
    4147503