DocumentCode
2282338
Title
Impact of device scaling and material composition on the soft error rates in avionic systems
Author
Atkinson, William J. ; Seidler, William A.
Author_Institution
Boeing Co., Huntsville, AL
fYear
2007
fDate
22-25 March 2007
Firstpage
601
Lastpage
605
Abstract
The soft error rate (SER) of CMOS device models due to atmospheric neutrons for technologies between 1992 and 2011 were computed at various altitudes and latitudes. Model predictions of the SER for 350 and 600 nm CMOS representative of 1992 and 1994 were 1.8 and 3 upsets per day. Predictions of 9.8 and 11.6 upsets per day were made for 100 and 50 nm CMOS devices representing the technologies of 2005 and 2011. These observations taken together indicated that the SER slowly increased with decreasing feature size at a rate less than linear for sizes below 100 nm.
Keywords
CMOS integrated circuits; avionics; radiation hardening (electronics); scaling circuits; 100 nm; 350 nm; 50 nm; 600 nm; CMOS device; atmospheric neutrons; avionic systems; device scaling; material composition; soft error rates; Aerospace electronics; Atmospheric modeling; Composite materials; Error analysis; Microelectronics; Neutrons; Postal services; Semiconductor device modeling; Single event transient; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SoutheastCon, 2007. Proceedings. IEEE
Conference_Location
Richmond, VA
Print_ISBN
1-4244-1028-2
Electronic_ISBN
1-4244-1029-0
Type
conf
DOI
10.1109/SECON.2007.342973
Filename
4147503
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