Embedded Nonvolatile Memories: A Key Enabler for Distributed Intelligence

Author

Baker, Kelly

Author_Institution

NVM Technol. Dev., Automotive, Ind. & Multi-Market Solutions Group, Freescale Semicond., Austin, TX, USA

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

4

Abstract

Embedded NVM (eNVM) has become a key component of many modern systems, enabling software-based control to be embedded into a wide range of applications. This paper surveys some of the market segments driving eNVM growth, the unique requirements for eNVM (versus stand-alone flash), the optimization choices, current solutions including recent 1T NOR and split-gate TFS eNVM, and future trends. While conventional embedded flash is likely to continue as the industry workhorse for eNVM, there is a significant opportunity for 1T-1R cells, such as MRAM, to impact the eNVM market if they are optimized to meet the unique eNVM requirements, including wide temperature range and robust operation.

Keywords

embedded systems; flash memories; random-access storage; 1T NOR; 1T-1R cells; MRAM; distributed intelligence; eNVM growth; eNVM market; embedded NVM; embedded flash; embedded nonvolatile memories; optimization; software-based control; split-gate TFS eNVM; stand-alone flash; temperature range; Arrays; Automotive engineering; Logic gates; Nonvolatile memory; Random access memory; Robustness; Split gate flash memory cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213637

Filename

6213637