DocumentCode :
2282381
Title :
Retention Model for High-Density ReRAM
Author :
Wei, Z. ; Takagi, T. ; Kanzawa, Y. ; Katoh, Y. ; Ninomiya, T. ; Kawai, K. ; Muraoka, S. ; Mitani, S. ; Katayama, K. ; Fujii, S. ; Miyanaga, R. ; Kawashima, Y. ; Mikawa, T. ; Shimakawa, K. ; Aono, K.
Author_Institution :
Devices Module Dev. Center, Panasonic Corp., Kyoto, Japan
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
A retention model for both the high resistance state and low resistance state of the bipolar ReRAM is developed. Degradation of resistance is caused by the oxygen vacancy profile in filament changing due to oxygen diffusion.
Keywords :
integrated circuit modelling; oxygen; random-access storage; bipolar ReRAM; filament changing; high resistance state; high-density ReRAM; low resistance state; retention model; Conductivity; Degradation; Electrodes; Resistance; Scanning electron microscopy; Switches; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
Type :
conf
DOI :
10.1109/IMW.2012.6213638
Filename :
6213638
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2282381
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