Title :
Advanced Hot-Carrier Injection Programming Scheme for Sub 20nm NAND Flash Cell and beyond
Author :
Ahn, Sang-Tae ; Mun, Kyungsik ; Lee, Keun Woo ; Cho, Gyuseog ; Park, Sung-Kye ; Lee, Seokkiu ; Hong, Sungjoo
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
Abstract :
A novel hot-carrier programming method for 20-nm-node technology NAND Flash cell is presented. In order to suppress the program disturb and the large power consumption, we utilized the self-channel boosting techniques with floated WLn-1, switching SSL, and a sufficiently high local field to cause efficient hot-carrier injection in NAND string. This method has been successfully demonstrated in the 20-nm-node NAND Flash cells, along with comprehensive studies on various bias conditions and algorithm. It would be very attractive for further scaling in NAND Flash memories beyond 20-nm technology.
Keywords :
NAND circuits; flash memories; hot carriers; NAND flash cell; NAND flash memories; NAND string; advanced hot-carrier injection programming; efficient hot-carrier injection; power consumption; self-channel boosting technique; size 20 nm; Boosting; Flash memory; Hot carrier injection; Human computer interaction; IEEE Potentials; Programming; Switches;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213642
