DocumentCode
2282535
Title
Hot Forming to Improve Memory Window and Uniformity of Low-Power HfOx-Based RRAMs
Author
Butcher, B. ; Bersuker, G. ; Young-Fisher, K.G. ; Gilmer, D.C. ; Kalantarian, A. ; Nishi, Y. ; Geer, R. ; Kirsch, P.D. ; Jammy, R.
Author_Institution
SEMATECH, Albany, NY, USA
fYear
2012
fDate
20-23 May 2012
Firstpage
1
Lastpage
4
Abstract
A method of forming RRAM devices at elevated temperatures (hot forming) is proposed. By drastically reducing time-to-forming, this hot forming method enables forming to be performed using low constant voltage biases, which is shown to increase resistance of the conductive filament, lower operational current, increase memory window and improve device-to-device uniformity.
Keywords
electric resistance; hafnium compounds; low-power electronics; random-access storage; temperature; HfO; RRAM device; conductive filament; device-to-device uniformity; elevated temperature; hot forming; low constant voltage bias; low-power RRAM; memory window; operational current; resistance; time-to-forming; Hafnium compounds; Integrated circuits; Performance evaluation; Resistance; Switches; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location
Milan
Print_ISBN
978-1-4673-1079-6
Type
conf
DOI
10.1109/IMW.2012.6213647
Filename
6213647
Link To Document