Bipolar-Switching Model of RRAM by Field- and Temperature-Activated Ion Migration

Author

Larentis, S. ; Nardi, F. ; Balatti, S. ; Ielmini, D. ; Gilmer, D.C.

Author_Institution

Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

4

Abstract

The resistive switching memory (RRAM) may offer a scalable solution for 3D high-density non-volatile storage. For physics-based prediction of RRAM scalability, however, accurate switching models must be developed. This work presents a numerical model for bipolar switching, capable of describing set/reset processes and reliability issues, such as program/read disturbs and retention. The numerical model is based on field- and temperature-activated ion migration and accounts for set/reset characteristics for different compliance currents and timescales (10 ns - 100 s) for HfO_x RRAM.

Keywords

random-access storage; reliability; 3D high-density nonvolatile storage; RRAM scalability; bipolar-switching model; field--activated ion migration; physics-based prediction; reliability; resistive switching memory; set-reset processe; temperature-activated ion migration; Conductivity; Electrodes; Hafnium compounds; Numerical models; Switches; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213648

Filename

6213648