Title :
Asymmetry, Vacancy Engineering and Mechanism for Bipolar RRAM
Author :
Gilmer, D.C. ; Bersuker, G. ; Koveshnikov, S. ; Jo, M. ; Kalantarian, A. ; Butcher, B. ; Geer, R. ; Nishi, Y. ; Kirsch, P.D. ; Jammy, Raj
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
The metal-oxide filament-based resistance change RAM (RRAM) have a preference toward bi-polar operation. For the first time, the mechanisms behind the operational bias and polarity preference, and the related ramifications for vacancy engineering toward improved bipolar RRAM operations, are explained. Experimental results support detailed models and demonstrate advantages of asymmetric oxygen vacancy engineering with 100% yielding RRAM devices fabricated with the preferred oxygen vacancy profile.
Keywords :
random-access storage; asymmetric oxygen vacancy engineering; bipolar RRAM operations; metal-oxide filament-based resistance change RAM; Anodes; Films; Hafnium compounds; Oxidation; Resistance; Switches;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213649
