Title :
A method for unified treatment of interface conditions suitable for device simulation
Author :
Simlinger, T. ; Rottinger, M. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Tech. Univ. Vienna, Austria
Abstract :
A method is presented which allows for a unified treatment of interface conditions covering also both extreme cases, Dirichlet and Neumann boundary conditions. This unified treatment is especially useful if the type of the interface condition depends on the internal state of the device. The method is applied to a heterojunction interface where thermionic field emission and tunneling is assumed.
Keywords :
p-n junctions; semiconductor device models; Dirichlet boundary conditions; Neumann boundary conditions; device simulation; heterojunction interface; interface conditions; thermionic field emission; tunneling; unified treatment; Analytical models; Boundary conditions; Charge carrier processes; Heterojunctions; Microelectronics; Numerical models; Semiconductor devices; Standards development; Thermionic emission; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621365
