Title :
Recent Advances in Spin Torque MRAM
Author :
Worledge, D.C. ; Gajek, M. ; Abraham, D.W. ; Brown, S. ; Gaidis, M.C. ; Hu, G. ; Nowak, J. ; O´Sullivan, Eugene J. ; Robertazzi, R.P. ; Sun, J.Z. ; Trouilloud, P.L. ; Gallagher, W.J.
Author_Institution :
IBM-MagIC MRAM Alliance, IBM TJ Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The switching current of Spin Torque Magnetic Random Access Memory (MRAM) can be reduced significantly by using perpendicularly magnetized materials. The Ta|CoFeB|MgO system provides both high tunneling magnetoresistance and perpendicular anisotropy. Using this materials system we have demonstrated basic write functionality in fully integrated Spin Torque MRAM arrays. Here, we further demonstrate device scaling down to 20 nm diameter, opening up the possibility of ultra-dense Spin Torque MRAM.
Keywords :
MRAM devices; boron compounds; cobalt compounds; iron compounds; magnesium compounds; magnetic tunnelling; magnetoresistance; tantalum compounds; Ta-CoFeB-MgO; device scaling; materials system; perpendicular anisotropy; perpendicularly magnetized material; size 20 nm; spin torque MRAM array; spin torque magnetic random access memory; switching current; tunneling magnetoresistance; ultra-dense spin torque MRAM; write functionality; Junctions; Magnetic hysteresis; Magnetic multilayers; Magnetic tunneling; Sun; Switches; Torque;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213652
