Title :
A 48 Mhz. 64kB FRAM with Sufficient Ferroelectric Domain Polarization
Author :
Qidwai, Saim A. ; Leisen, Scott ; Kraus, William ; Summerfelt, Scott ; Glazewski, Robert ; Chowdhury, Subir ; Gandhi, Kunal ; Heinrich-Barna, Steve
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A 17.2 ns access and 20.5 ns cycle 64 kB (2T2C) FRAM in 130 nm was demonstrated. This is the fastest FRAM at 1.57V to be reported to date based on silicon data. The FRAM used a unique timing controller (UTC) that characterized the switching behavior of the ferroelectric capacitor (fe-cap) in the sub 5 ns range and enabled the reduction of the access and cycle times with acceptable signal margin loss. Two methodologies are proposed to tradeoff speed vs. signal margin in a FRAM based product using the UTC.
Keywords :
ferroelectric capacitors; acceptable signal margin loss; cycle times; fastest FRAM; ferroelectric capacitor; frequency 48 MHz; silicon data; size 130 nm; sufficient ferroelectric domain polarization; switching behavior; unique timing controller; voltage 1.57 V; Capacitors; Data models; Ferroelectric films; Nonvolatile memory; Random access memory; Silicon; Timing;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213654
