DocumentCode
2282754
Title
Quantum resistance standards with double 2DEG
Author
Bounouh, A. ; Poirier, W. ; Piquemal, F. ; Geneves, G. ; Andre, J.P.
Author_Institution
BNM-LNE, Fontenay-aux-Roses, France
fYear
2002
fDate
16-21 June 2002
Firstpage
240
Lastpage
241
Abstract
A new generation of quantum Hall array resistance standards (QHARS) designed from GaAs/AlGaAs heterostructures with double two-dimensional electron gases (2DEGs) has been developed. First results of measurements carried out on a single Hall bar (R/sub K//4) and 50 Hall bars placed in parallel by triple connections (R/sub K//200) are presented.
Keywords
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; semiconductor heterojunctions; two-dimensional electron gas; GaAs-AlGaAs; GaAs/AlGaAs heterostructures; QHARS; double 2DEG; double two-dimensional electron gases; parallel Hall bar measurements; quantum Hall array resistance standards; single Hall bar measurements; triple connections; Bars; Circuit synthesis; Electrical resistance measurement; Electrons; Gallium arsenide; Gases; Hall effect; Magnetic tunneling; Ohmic contacts; Standards development;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
Conference_Location
Ottawa, Ontario, Canada
Print_ISBN
0-7803-7242-5
Type
conf
DOI
10.1109/CPEM.2002.1034811
Filename
1034811
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