Title :
Fabrication and characterization of the quantum Hall devices
Author :
Huang, C.F. ; Hwang, G.J. ; Chang, Y.H.
Author_Institution :
Mater. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
Quantum Hall resistance has been adopted as an international resistance standard since 1990. GaAs/AlGaAs heterostructures grown by molecular beam epitaxy were fabricated into quantum Hall devices. Ten devices with good accuracy were obtained. The effects of temperature, current, and sample homogeneity on the quantum Hall plateau are reported.
Keywords :
Hall effect devices; III-V semiconductors; aluminium compounds; gallium arsenide; measurement standards; molecular beam epitaxial growth; quantum Hall effect; resistors; semiconductor device measurement; GaAs-AlGaAs; GaAs/AlGaAs heterostructures; device accuracy; molecular beam epitaxy growth; quantum Hall devices; quantum Hall plateau; quantum Hall resistance; resistance standard applications; temperature/current/sample homogeneity effects; Collision mitigation; Electrical resistance measurement; Fabrication; Gallium arsenide; Measurement standards; Molecular beam epitaxial growth; Physics; Probes; Temperature dependence; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
Conference_Location :
Ottawa, Ontario, Canada
Print_ISBN :
0-7803-7242-5
DOI :
10.1109/CPEM.2002.1034815
