• DocumentCode
    2282823
  • Title

    Fabrication and characterization of the quantum Hall devices

  • Author

    Huang, C.F. ; Hwang, G.J. ; Chang, Y.H.

  • Author_Institution
    Mater. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2002
  • fDate
    16-21 June 2002
  • Firstpage
    248
  • Lastpage
    249
  • Abstract
    Quantum Hall resistance has been adopted as an international resistance standard since 1990. GaAs/AlGaAs heterostructures grown by molecular beam epitaxy were fabricated into quantum Hall devices. Ten devices with good accuracy were obtained. The effects of temperature, current, and sample homogeneity on the quantum Hall plateau are reported.
  • Keywords
    Hall effect devices; III-V semiconductors; aluminium compounds; gallium arsenide; measurement standards; molecular beam epitaxial growth; quantum Hall effect; resistors; semiconductor device measurement; GaAs-AlGaAs; GaAs/AlGaAs heterostructures; device accuracy; molecular beam epitaxy growth; quantum Hall devices; quantum Hall plateau; quantum Hall resistance; resistance standard applications; temperature/current/sample homogeneity effects; Collision mitigation; Electrical resistance measurement; Fabrication; Gallium arsenide; Measurement standards; Molecular beam epitaxial growth; Physics; Probes; Temperature dependence; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
  • Conference_Location
    Ottawa, Ontario, Canada
  • Print_ISBN
    0-7803-7242-5
  • Type

    conf

  • DOI
    10.1109/CPEM.2002.1034815
  • Filename
    1034815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2282823