DocumentCode :
2282917
Title :
High Performance Nanocrystal Based Embedded Flash Microcontrollers with Exceptional Endurance and Nanocrystal Scaling Capability
Author :
Sung-Taeg Kang ; Winstead, B. ; Yater, J. ; Suhail, M. ; Zhang, Ge ; Hong, Chih-Ming ; Gasquet, H. ; Kolar, D. ; Shen, Jianbing ; Min, Bumki ; Loiko, K. ; Hardell, A. ; LePore, E. ; Parks, R. ; Syzdek, R. ; Williams, S. ; Malloch, W. ; Chindalore, G. ; Ch
Author_Institution :
Automotive & Ind. Solutions Group, Freescale Semicond., Inc., Austin, TX, USA
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we present the first-ever commercially available embedded Microcontrollers built on 90nm-node with silicon nanocrystal memories that has intrinsic capability of exceeding 500K program/erase cycles. We also show that the cycling performance across temperature (-40C to 125C) is very well behaved even while maintaining high performance that meets or exceeds the requirements of consumer, industrial, and automotive markets. In specific EEPROM implementation, such high endurance is capable of delivering in excess of 200M data updates. In addition, we also demonstrate that the nanocrystal flash memory is highly scalable to the next generation nodes and the scaling can be accomplished without degradation of pro-gram/erase speed, endurance and reliability.
Keywords :
flash memories; microcontrollers; silicon; EEPROM; embedded flash microcontroller; embedded microcontroller; high performance nanocrystal; nanocrystal flash memory; nanocrystal scaling capability; next generation node; silicon nanocrystal memory; size 90 nm; temperature -40 C to 125 C; Arrays; Degradation; Logic gates; Microcontrollers; Nanocrystals; Reliability; Scalability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
Type :
conf
DOI :
10.1109/IMW.2012.6213668
Filename :
6213668
Link To Document :
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