High Performance Nanocrystal Based Embedded Flash Microcontrollers with Exceptional Endurance and Nanocrystal Scaling Capability

Author

Sung-Taeg Kang ; Winstead, B. ; Yater, J. ; Suhail, M. ; Zhang, Ge ; Hong, Chih-Ming ; Gasquet, H. ; Kolar, D. ; Shen, Jianbing ; Min, Bumki ; Loiko, K. ; Hardell, A. ; LePore, E. ; Parks, R. ; Syzdek, R. ; Williams, S. ; Malloch, W. ; Chindalore, G. ; Ch

Author_Institution

Automotive & Ind. Solutions Group, Freescale Semicond., Inc., Austin, TX, USA

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, we present the first-ever commercially available embedded Microcontrollers built on 90nm-node with silicon nanocrystal memories that has intrinsic capability of exceeding 500K program/erase cycles. We also show that the cycling performance across temperature (-40C to 125C) is very well behaved even while maintaining high performance that meets or exceeds the requirements of consumer, industrial, and automotive markets. In specific EEPROM implementation, such high endurance is capable of delivering in excess of 200M data updates. In addition, we also demonstrate that the nanocrystal flash memory is highly scalable to the next generation nodes and the scaling can be accomplished without degradation of pro-gram/erase speed, endurance and reliability.

Keywords

flash memories; microcontrollers; silicon; EEPROM; embedded flash microcontroller; embedded microcontroller; high performance nanocrystal; nanocrystal flash memory; nanocrystal scaling capability; next generation node; silicon nanocrystal memory; size 90 nm; temperature -40 C to 125 C; Arrays; Degradation; Logic gates; Microcontrollers; Nanocrystals; Reliability; Scalability;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213668

Filename

6213668