A pocket implant model for sub-0.18 micron CMOS process flows

Author

Vasanth, K. ; Nandakumar, M. ; Rodder, M. ; Sridhar, S. ; Mozumder, P.K. ; Chen, I.-C.

Author_Institution

Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

181

Lastpage

183

Abstract

In this paper we present a method of arriving at dopant distributions required for accurate performance estimation of 0.18 micron CMOS flows with pocket implants. Dopant profiles are calculated using a combination of physical and phenomenological models and measured device performance data. The method is demonstrated for NMOS and PMOS devices with varying pocket implant doses, energies and angles, and scaled supply voltages.

Keywords

CMOS integrated circuits; MOSFET; doping profiles; impurity distribution; integrated circuit modelling; ion implantation; semiconductor device models; semiconductor process modelling; 0.18 micron; NMOS devices; PMOS devices; device performance data; dopant distributions; dopant profiles; performance estimation; phenomenological models; physical models; pocket implant model; scaled supply voltages; submicron CMOS process flows; Boron; CMOS process; Implants; Instruments; Ion implantation; MOS devices; Process design; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621367

Filename

621367