Highly Reliable Flash Memory with Self-Aligned Split-Gate Cell Embedded into High Performance 65nm CMOS for Automotive & Smartcard Applications

Author

Shum, D. ; Power, J.R. ; Ullmann, R. ; Suryaputra, E. ; Ho, K. ; Hsiao, J. ; Tan, C.H. ; Langheinrich, W. ; Bukethal, C. ; Pissors, V. ; Tempel, G. ; Röhrich, M. ; Gratz, A. ; Iserhagen, A. ; Andersen, E.O. ; Paprotta, S. ; Dickenscheid, W. ; Strenz, R. ;

Author_Institution

Infineon Technol. Taiwan Co., Ltd., Taipei, Taiwan

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

4

Abstract

A split-gate (SG) flash memory cell has been embedded in a 65nm ground-rule high performance (HP) CMOS logic process with copper low K interconnects. A gate spacer processing sequence self-aligned (SA) process provides a reliability-robust cell and high degree of modularity with one extra mask to form the SG structure. The proposed cell is optimized for minimum module area overhead, high endurance and can be integrated in a standard stacked gate Technology in a modular way.

Keywords

CMOS logic circuits; CMOS memory circuits; flash memories; integrated circuit interconnections; integrated circuit reliability; SG flash memory cell; SG structure; automotive applications; copper low K interconnects; gate spacer processing sequence SA process; gate spacer processing sequence self-aligned process; ground-rule HP CMOS logic process; ground-rule high performance CMOS logic process; highly reliable flash memory; reliability-robust cell; self-aligned split-gate cell; smartcard applications; split-gate flash memory cell; standard stacked gate technology; CMOS integrated circuits; Computer architecture; Logic gates; Microprocessors; Reliability; Split gate flash memory cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213670

Filename

6213670